A fabrication process for homo-junction bottom-gate (HJBG) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. in which the a-IGZO section as source/drain (S/D) regions is induced into a low resistance state by coating a thin metal Al film and then performing a thermal annealing in oxygen. with the channel region protected from back etching by depositing and patter... https://www.fitnessgravesyardes.shop/product-category/top-cap-shroud-assembly/